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    • 专利摘要:
    The invention relates to a method for manufacturing elementary chips (200) of an LED emitting display device, each chip comprising an inorganic semiconductor LED (110), a control circuit (120) of the LED, and a plurality connecting pads (125, 126, 127, 128) to an external device disposed on a connection face of the chip.
    公开号:FR3066320A1
    申请号:FR1754150
    申请日:2017-05-11
    公开日:2018-11-16
    发明作者:Ivan-Christophe Robin；Hubert Bono
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    METHOD FOR MANUFACTURING AN EMISSIBLE LED DISPLAY DEVICE
    Field
    The present application relates to the production of an emissive image display device with light-emitting diodes (LED), for example a television screen, computer screen, smartphone, digital tablet, etc.
    Presentation of the prior art
    It has already been proposed, in French patent application No. 1561421 filed on November 26, 2015, a method of manufacturing an image display device comprising a plurality of elementary electronic microchips arranged in a matrix on the same substrate. postponement. According to this method, the microchips and the transfer substrate are produced separately. Each microchip includes a stack of an LED and an LED driver. The control circuit includes a connection face opposite the LED, comprising a plurality of electrical connection pads intended to be connected to the transfer substrate for controlling the microchip. The transfer substrate comprises a connection face comprising, for each microchip, a plurality of electrical connection pads intended to be connected respectively to the electrical connection pads of the microchip. The chips are then attached to the transfer substrate, connection faces facing the connection face of the transfer substrate, and fixed to the transfer substrate so as to connect the electrical connection pads of each microchip to the corresponding electrical connection pads of the transfer substrate.
    It would be desirable to be able to at least partially improve certain aspects of this process and / or of the display devices produced by this process. summary
    Thus, one embodiment provides a method of manufacturing elementary chips of an emissive LED display device, each chip comprising an inorganic semiconductor LED, an LED control circuit, and a plurality of connection pads to a external device arranged on a connection face of the chip, the method comprising the following steps: a) forming the control circuits of the chips in and on a semiconductor substrate so that each control circuit comprises a contact pad on the side a first face of the substrate; b) adding on the first face of the substrate a stack of LEDs comprising at least first and second semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the contact pads of the control circuits; c) forming in each chip a peripheral trench surrounding, in top view, the control circuit and the LED of the chip, the peripheral trench extending vertically in the substrate over the entire height of the control circuit, crossing the second layer semiconductor of the LED stack, and penetrating at least partially into the first semiconductor layer of the LED stack; d) forming in each trench an annular metallization in contact with the first semiconductor layer of the stack of LEDs over the entire length of the trench; and e) cutting the substrate and the stack of LEDs in cutting paths situated, in top view, outside the peripheral trenches of the chips so as to individualize the chips.
    According to one embodiment, in each chip: the face of the annular metallization opposite to the first semiconductor layer of the LED stack opens onto a second face of the substrate opposite to the first face and defines a first connection area of the chip ; and at least a second electrical connection pad connected to the control circuit of the chip is formed on the second face of the substrate.
    According to one embodiment, the trenches are formed from the second face of the substrate, after the formation of said at least one second electrical connection pad.
    According to one embodiment, the trenches completely pass through the substrate and the second semiconductor layer of the LED stack, and are interrupted in the first semiconductor layer of the LED stack.
    According to one embodiment, between step c) and step d), a step of conformal deposition of an insulating layer on the side walls and on the bottom of the trenches, and a step of removing said insulating layer at the bottom of the trenches to free access to the first semiconductor layer from the LED stack.
    According to one embodiment, the trenches are formed from the face of the stack of LEDs opposite the substrate, before the formation of said at least one second electrical connection pad.
    According to one embodiment, the trenches completely pass through the stack of LEDs, and penetrate into the substrate to a depth greater than or equal to the thickness of the control circuit.
    According to one embodiment, between step c) and step d), a step of conformal deposition of an insulating layer on the side walls and on the bottom of the trenches, and a step of removing said insulating layer on an upper part of the side walls of the trenches, to free access to the first semiconductor layer from the stack of LEDs.
    According to one embodiment, the method further comprises, before step a), a step of depositing a first metallic layer extending continuously over substantially the entire first face of the substrate, and a step of depositing a second metal layer extending continuously over substantially the entire surface of the second semiconductor layer of the LED stack opposite the first semiconductor layer of said stack.
    According to one embodiment, in step b), the LED stack is fixed to the substrate by direct bonding of the first metallic layer to the second metallic layer.
    Another embodiment provides a method of manufacturing an emissive LED display device, comprising the following steps: producing a plurality of elementary chips by a method as defined above; producing a transfer substrate comprising, for each chip, on a connection face of the transfer substrate, a plurality of connection pads intended to be connected respectively to the connection pads of the chip; and fixing the chips on the transfer substrate so as to electrically connect the connection pads of the chips to the corresponding connection pads of the transfer substrate.
    According to one embodiment, at the end of step e), the chips are arranged on a support substrate according to an inter-chip pitch less than the inter-chip pitch of the final display device; and only a part of the chips of the support substrate are fixed to the transfer substrate at the pitch of the final display device and are selectively detached from the support substrate.
    Another embodiment provides an elementary chip of an emissive LED display device, comprising an inorganic semiconductor LED, an LED control circuit, and a plurality of pads for connection to an external device, in which: the control circuit is formed in and on a semiconductor substrate and comprises a contact pad on the side of a first face of the substrate; the LED is formed in a stack of LEDs comprising at least first and second semiconductor layers of opposite conductivity types, the second layer of the stack being electrically connected to the contact pad of the control circuit; at least one peripheral trench surrounds, in top view, the control circuit and the LED of the chip, the annular trench extending vertically over the entire height of the control circuit, passing through the second semiconductor layer and penetrating at least partially into the first semiconductor layer of the LED stack; and an annular metallization disposed in the annular trench is in contact with the first semiconductor layer of the stack of LEDs over the entire length of the trench.
    According to one embodiment, a stack of first and second metal layers extending over substantially the entire surface of the control circuit interfaces with the control circuit and the LED of the chip.
    Another embodiment provides an emissive LED display device comprising: a plurality of elementary chips as defined above; and a transfer substrate comprising, for each chip, on a connection face of the transfer substrate, a plurality of connection pads connected respectively to the connection pads of the chip.
    Brief description of the drawings
    These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments made without implied limitation in relation to the appended figures among which: FIG. 1 is a sectional view schematically illustrating a step of transferring a microchip onto a transfer substrate, according to an example of a method of manufacturing an emissive LED display device; Figures 2A, 2B, 2C, 2D, 2E, 2F, 2G, 2H, 21, 2J, 2K, 2L and 2M are sectional views illustrating steps of an example of a method for manufacturing elementary microchips of an emissive LED display device according to one embodiment; FIGS. 3A and 3B are sectional views illustrating steps of an example of a method of manufacturing an emissive LED display device based on microchips produced by the method of FIGS. 2A to 2M; FIGS. 4A, 4B, 4C, 4D, 4E and 4F are sectional views illustrating steps of another example of a method for manufacturing elementary microchips of an emissive LED display device according to one embodiment ; Figure 5 is a sectional view illustrating in more detail a step of the method of Figures 2A to 2M; and Figure 6 is a sectional view illustrating in more detail a step in the method of Figures 4A to 4F.
    detailed description
    The same elements have been designated by the same references in the different figures and, moreover, the various figures are not drawn to scale. For the sake of clarity, only the elements useful for understanding the described embodiments have been shown and are detailed. In particular, the manufacture of the LEDs and of the control circuits of the elementary microchips, and of the transfer substrate of the display devices described has not been detailed, the manufacture of these elements being within the reach of those skilled in the art at from the lessons of this description.
    In the following description, when reference is made to qualifiers for absolute position, such as "front", "back", "up", "down", "left", "right", etc., or relative, such as "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as "horizontal", "vertical", etc., there reference is made to the orientation of the corresponding figures, it being understood that, in practice, the devices described can be oriented differently. Unless otherwise specified, the terms "approximately", "substantially", and "on the order of" mean to the nearest 10%, preferably to the nearest 5%.
    Figure 1 is a sectional view schematically and partially illustrating a step of transferring a microchip 100 onto a transfer substrate 150, according to an example of a method of manufacturing an emissive LED display device.
    FIG. 1 represents more particularly the microchip 100 and the transfer substrate 150 before the actual step of fixing the microchip on the transfer substrate.
    In practice, a display device can comprise a plurality of identical or similar elementary chips 100 mounted on the same transfer substrate in a matrix arrangement according to rows and columns, the chips being connected to electrical connection elements of the substrate. for their control, and each microchip corresponding for example to a pixel of the display device.
    The microchip 100 comprises, in an upper portion, an inorganic semiconductor LED 110, and, in a lower portion integral with the upper portion, an active control circuit 120 formed in and on a semiconductor substrate, for example made of monocrystalline silicon, suitable for control the light emission by the LED.
    LED 110 comprises at least one homo junction or heterojunction, for example a PN junction formed by a stack of an upper semiconductor layer of type N 112 and of a lower semiconductor layer of type P 114, and two electrical contacts 116 and 118, respectively on layer 112 and on layer 114, for injecting an electric current through the stack, in order to produce light. By way of example, the LED 110 is a LED with gallium nitride (GaN) or based on any other suitable III-V semiconductor.
    The control circuit 120 is produced in and on a semiconductor substrate 121, for example a block of monocrystalline silicon, and comprises electronic components, and in particular one or more transistors and at least one capacitive element for maintaining a polarization signal, for the individual control of LED 110. The upper face of the control circuit 120 is in mechanical and electrical contact with the LED 110. The lower face of the circuit 120, defining a connection face of the microchip, comprises a plurality of ranges of electrical connection intended to be connected to corresponding electrical connection pads of the transfer substrate 150 for controlling the microchip. In the example shown, the underside of the circuit 120 comprises four electrical connection pads 125, 126, 127 and 128. The pads 125 and 126 are intended to receive respectively a low supply potential (for example the ground) Vn and a high supply potential (that is to say greater than the low supply potential) Vp of the microchip. Tracks 127 and 128 are intended to receive control signals from the microchip. More particularly, the range 127 is intended to receive a signal Vsel for selecting the microchip, and the range 128 is intended to receive a signal Vdata for adjusting the brightness level of the microchip. The connection pads 125, 126, 127 and 128 are for example made of metal, for example copper. In this example, the control circuit 120 comprises two MOS transistors 122 and 123 and a capacitive element 124, for example a capacitor. The transistor 122, for example a P channel transistor, has a first conduction node (source or drain) connected to the connection pad 126 (Vp) of the microchip, a second conduction node (drain or source) connected to the anode contact terminal 118 of LED 110, and a control node (grid) connected to an intermediate node al of the circuit 120. The capacitive element 124 has a first electrode connected to the node al and a second electrode connected to the connection range 126 (Vp) of the microchip. The transistor 123, for example an N-channel transistor, has a first conduction node connected to the connection pad 128 (Vdata) of the microchip, a second conduction node connected to the node al, and a control node connected to the connection area 127 (Vsel) of the microchip. The microchip 100 further comprises an insulated conductor via 129 connecting the electrical connection pad 125 (Vn) of the microchip to the cathode contact terminal 116 of the LED 110.
    The operation of the elementary microchip 100 during a phase of updating the pixel brightness level is as follows. The transistor 123 is closed (turned on) by the application of a suitable control signal on the terminal 127 (Vsel). The capacitive element 124 is then charged at a voltage level which is a function of the adjustment signal applied to the terminal 128 (Vdata) of the microchip. The level of the adjustment signal Vdata fixes the potential of the node al, and consequently the intensity of the current injected into the LED by the transistor 122, and therefore the light intensity emitted by the LED. The transistor 123 can then be reopened. The node al then remains at a potential substantially equal to the potential Vdata. Thus, the current injected into the LED remains substantially constant after the reopening of the transistor 123, and this until the next update of the potential of the node al.
    The transfer substrate 150 comprises for example a plate or a support sheet 151 made of an insulating material, on which are arranged electrical connection elements, for example conductive tracks and pads. The transfer substrate 150 is for example a passive substrate, that is to say that it only comprises electrical connection elements for supplying the control and supply signals of the microchips. The transfer substrate 150 comprises a connection face, its upper face in the example shown, intended to receive the microchips 100. For each microchip of the display device, the transfer substrate 150 comprises, on its connection face, a plurality of electrical connection pads (one per electrical connection pad of the microchip) intended to be connected respectively to the electrical connection pads of the microchip. Thus, in this example, for each microchip 100 of the display device, the transfer substrate 150 comprises four electrical connection pads 155, 156, 157 and 158 intended to be connected respectively to the electrical connection pads 125, 126, 127 and 128 of the microchip 100, for supplying the control signals Vn, Vp, Vsel and Vdata of the microchip. The electrical connection pads 155, 156, 157 and 158 of the transfer substrate are for example of the same conductive material as the electrical connection pads 125, 126, 127 and 128 of the microchips, for example copper.
    During the transfer of the microchip 100 onto the transfer substrate 150, the connection face of the microchip is brought into contact with the connection face of the transfer substrate so as to electrically connect the electrical connection pads 125, 126, 127 and 128 of the microchip respectively to the corresponding electrical connection pads 155, 156, 157 and 158 of the transfer substrate. The attachment of the microchip 100 to the transfer substrate is for example carried out by direct bonding, that is to say without the addition of adhesive material or solder at the interface between the microchip and the substrate.
    FIGS. 2A to 2M are sectional views illustrating successive steps of an example of a method for manufacturing elementary microchips 200 of an emissive LED display device according to one embodiment. FIGS. 2A to 2M show more particularly the simultaneous production of two neighboring microchips, it being understood that, in practice, the number of microchips produced simultaneously can be much higher.
    The microchips 200 produced by the method of FIGS. 2A to 2M comprise elements common to the microchips 100 described in relation to FIG. 1. In particular, like the microchips 100 of FIG. 1, the microchips 200 of FIGS. 2A to 2M each include an inorganic semiconductor LED 110 and an active control circuit 120 adapted to control the emission of light by the LED. As in the example of FIG. 1, the control circuit 120 comprises a first face in mechanical and electrical contact with a face of the LED 110, and a second face opposite to the first face, defining a connection face of the microchip , comprising connection pads to an external device. The common elements between the microchips 100 of FIG. 1 and the microchips 200 of FIGS. 2A to 2M will not be detailed again.
    FIG. 2A illustrates a step of forming the control circuits 120 of the microchips 200 in and on a semiconductor substrate 201, for example made of silicon. For example, the substrate 201 is a solid semiconductor substrate, or a substrate of the semiconductor on insulator (SOI) type. In this example, each elementary control circuit 120 comprises substantially the same components as in the example in FIG. 1, arranged in substantially the same manner. The transistors 122 and 123 and the capacitive element 124 of each control circuit 120 are formed in and on the substrate 201, on the side of one face of the substrate 201 which will be called hereinafter the front face of the substrate. In each control circuit 120, at least one electrical connection pad intended to be connected to the LED 110 of the microchip is formed on the side of the front face of the substrate 201. More particularly, in the example shown, each control circuit 120 comprises, on the side of the front face of the substrate 201, an electrical connection pad 218 connected to the conduction node of the transistor 122 not connected to the capacitive element 124, intended to be connected to the LED 110. As an example , the electrical connection pads 218 are made of metal and are laterally surrounded by an insulating material, for example silicon oxide, so that the control circuit 120 has a substantially planar front face. At this stage, the external connection pads 125, 126, 127 and 128 of the microchips are not yet formed. These connection pads will be formed later on the side of the rear face of the substrate 201.
    FIG. 2A further illustrates a separate step of forming an inorganic LED stack 203 on one face of a growth substrate 205. The growth substrate 205 is for example a sapphire or silicon substrate. By way of example, the stack 203 is a stack of gallium nitride LEDs, comprising, on the upper face of the growth substrate 205, a PN junction formed by a stack of a lower layer of gallium nitride of type N 112, and an upper layer of gallium nitride type P 114. More generally, any other stack of inorganic LEDs, for example based on III-V semiconductor, can be produced at this stage on the upper face of the growth substrate 205. It will be noted in particular that the stack 203 may include an emissive layer not detailed in the figures, for example consisting of a stack of one or more emissive layers each forming a quantum well, between the type layer N 112 and the P-type layer 114. The stack 203 is for example formed by epitaxy on the upper face of the growth substrate 205.
    FIG. 2B illustrates a step of depositing, on the front face of the substrate 201, a metal layer 220. In the example shown, the metal layer 220 covers substantially the entire front face of the substrate 201. In particular, the layer 220 covers the entire front face of each control circuit 120, and is in contact with the connection pad 218 of the control circuit.
    FIG. 2B further illustrates a step of depositing, on the upper face of the LED stack 203, a metal layer 222. In the example shown, the metal layer 222 is placed on and in contact with the upper face of the P-type semiconductor layer 114 of the stack of LEDs 203. The metal layer 222 for example covers substantially the entire upper surface of the stack 203.
    FIG. 2C illustrates a step of transferring the stack of LEDs 203 on the front face of the substrate 201. For this, the face of the metal layer 220 opposite the substrate 201 is brought into contact with the face of the metal layer 222 opposite to the substrate 205. During this step, the stack of LEDs 203 is made integral with the control circuits 120 formed in and on the substrate 201. In addition, the P-type layer 114 of the stack of LEDs 203 is electrically connected to the connection pad 218 of each control circuit 120 by means of the metal layers 220 and 222. By way of example, the fixing of the LED stack 203 on the substrate circuit 201 can be obtained by direct bonding between the contact faces of the layers 220 and 222. For this, the layers 220 and 222 are preferably of the same kind, for example made of copper, titanium, or aluminum. In addition, a step of preparing the contact surfaces of the metal layers 220 and 222 can be provided prior to the transfer, for example a chemical mechanical polishing step (CMP), so as to obtain a sufficient flatness, for example a lower roughness. at 1 nm, to achieve direct bonding between layers 220 and 222. Annealing may optionally be provided after bonding, for example at a temperature between 150 and 250 ° C, to increase the strength of the bonding. At this stage, the stack of LEDs 203 is a continuous stack (not divided into individual LEDs) extending over substantially the entire surface of the semiconductor substrate 201.
    FIG. 2D illustrates a step of removing the growth substrate 205 from the stack of LEDs 203. In the case of a growth substrate 205 made of sapphire, the latter can for example be detached from the stack 203 by means of a laser beam projected through the substrate 205 from its face opposite to the stack 203. In the case of a silicon growth substrate 205, the latter can for example be removed by grinding and etching, for example by means of an etching solution based on potassium hydroxide, or by reactive ion etching (RIE). The withdrawal of the growth substrate 205 leads to free access to the underside of the N-type semiconductor layer 112 of the stack of LEDs 203.
    FIG. 2E illustrates a step during which a support substrate 207 is bonded to the underside of the N-type semiconductor layer 112 of the LED stack 203, replacing the growth substrate 205. The substrate 207 is fixed to layer 112 by a so-called temporary bonding, having a lower adhesion energy than the initial bond between the microchips and the LED growth substrate, so as to facilitate a subsequent step of removing the microchips. By way of example, the support substrate 207 is a transparent adhesive film capable of being peeled off by UV irradiation. As a variant, the steps of FIGS. 2D and 2E can be omitted, the substrate 205 for growing the stack of LEDs 203 then being used as a support substrate for the rest of the process.
    FIG. 2F illustrates a step of forming electrical connection pads of the microchips on the side of the rear face of the substrate 201. During this step, only the bond pads of the microchip contacting components of the circuit are formed in each microchip control 120 of the microchip, namely the connection pads 126, 127 and 128 using the references of FIG. 1. In particular, the electrical connection pad 125 contacting the N-type semiconductor layer 112 of the LED stack 203 is not trained at this stage. The substrate 201 can be thinned beforehand by its rear face, for example by grinding, so as to facilitate access to the components of the control circuits 120 to be contacted. The electrical connection pads 126, 127, 128 are for example made of metal, for example copper. By way of example, the electrical connection pads 126, 127, 128 are connected to the components of the control circuits 120 by means of insulated conductive vias 126 ', 127', 128 'passing entirely through the substrate 201 and contacting metallizations 126 '', 127 '' and 128 '' previously formed on the side of the front face of the substrate 201, as illustrated in more detail in FIG. 5. In particular
    FIG. 2G illustrates a step of forming, in each microchip, from the rear face of the substrate 201, an annular peripheral trench 209, entirely surrounding, in top view, the control circuit 120 and the LED 110 of the microchip. Each trench 209 extends vertically from the rear face of the substrate 201, passes entirely through the substrate 201, the metal layers 220 and 222, and the P-type semiconductor layer 114 of the stack of LEDs 203, penetrates into the semiconductor layer of type N 112 and is interrupted at an intermediate level between the upper face and the lower face of the semiconductor layer 112. The trenches 209 are for example formed by etching, for example by reactive ion etching with inductive coupling plasma (RIE-ICP ). An etching mask 211, for example made of silicon oxide, is formed beforehand on the rear face of the substrate 201 to delimit the etching zones.
    FIG. 2H illustrates a step of conformal deposition of an electrically insulating layer 213, for example a layer of silicon oxide, on the side walls and on the bottom of the trenches 209. In the example shown, the layer 213 is a continuous layer extending over substantially the entire upper surface of the structure obtained at the end of the step in FIG. 2G. The layer 213 is for example formed by chemical vapor deposition assisted by plasma (PECVD) or by deposition in successive monoatomic layers (ALD).
    FIG. 21 illustrates a step of removing the insulating layer 213 at the bottom of the trenches 209, so as to free access to the lower semiconductor layer 112 from the stack of LEDs 203. During this step, the layer 213 is kept on the sides of the trenches 209. For example, to remove the layer 213 at the bottom of the trenches 209 while preserving it on the sides of the trenches, a directional etching can be implemented, so as to obtain an etching speed in the vertical direction significantly higher than the etching speed in the horizontal direction (in the orientation of Figure 21).
    FIG. 21 also illustrates a step of etching the semiconductor layer 112 of the stack of LEDs 203 at the bottom of the trenches 209, for example by reactive ion etching with inductively coupled plasma. In other words, after the removal of the insulating layer 213 at the bottom of the trenches 209, the trenches 209 are extended through the semiconductor layer 112 of the LED stack, to the upper face of the support substrate 207 or the substrate of growth 205.
    The mask 211 previously deposited for the formation of the trenches 209 can then be removed, for example by etching, so as to free access to the upper face of the electrical connection pads 126, 127 and 128 of the control circuits 120.
    FIG. 2J illustrates a step of filling the trenches 209 with a conductive metal, for example copper. In the example shown, during this step, a continuous metal layer 215 is deposited over the entire upper surface of the assembly, that is to say not only in the trenches 209, but also on the rear face of the substrate. 201. For example, the formation of layer 215 comprises a first step of conformal deposition of a primer layer so as to make an electrical contact on the lower semiconductor layer 112 of the stack of LEDs, at the level side walls of the extensions of the trenches 209 produced in the previous step, then a second step of depositing a thicker metallic layer, for example an electrochemical deposit of copper, so as to fill the trenches 209.
    FIG. 2K illustrates a step of mechanochemical polishing (CMP) of the upper face of the assembly obtained at the end of the steps of FIG. 2J, so as to remove the metal layer 215 outside the trenches 209 and in particular on the rear face of the control circuits 120. At the end of this step, a monolithic assembly is obtained having a substantially flat rear face. In each microchip, the previously formed electrical connection pads 126, 127 and 128 are flush with the rear face or connection face of the microchip. In addition, each microchip now includes, in addition to the electrical connection areas 126, 127 and 128, an annular metallization 215 disposed in the peripheral trench 209 of the microchip, connected to the lower semiconductor layer 112 of the LED 110 of the microchip, and isolated from the upper semiconductor layer 114 of the LED and from the sides of the control circuit 120 by the insulating layer 213. The annular metallization 215 is flush with the rear face of the microchip and constitutes the electrical connection area 125 of the microchip (using the notation in Figure 1). At this stage, the electrical connection areas 125, 126, 127 and 128 of each microchip are separated laterally by an insulating material, for example silicon oxide.
    FIG. 2L illustrates a step of cutting the substrate 201, the metal layers 220 and 222, and the stack of LEDs 203 in cutting paths situated, in top view, between the peripheral trenches 209 of the microchips, so as to individualize the microchips. By way of example, the cutting of the microchips can be carried out by reactive ion etching with inductively coupled plasma, an etching mask being previously deposited on the upper face of the assembly to delimit the cutting paths. At the end of this step, the microchips 200 are entirely separated from each other mechanically and electrically, and are attached to the support substrate 207 or to the growth substrate 205 only by their lower face (LED side 110).
    FIG. 2M illustrates an optional step of forming conductive microstructures 217 on the upper face of the electrical connection pads 125, 126, 127 and 128 of each microchip 200, in order to facilitate the subsequent fixing of the microchips to an external device. By way of example, the microstructures 217 are metallic microtubes, for example made of tungsten, formed by a process of the type described in patent application US2011 / 094789. As a variant, the microstructures 217 are microtips of the type described in patent application US2008 / 190655.
    FIGS. 3A and 3B are sectional views illustrating steps of an example of a method of manufacturing an emissive LED display device based on microchips produced by the method of FIGS. 2A to 2M.
    FIG. 3A illustrates a step during which, after having formed on the one hand the microchips 200 on a support substrate 207 or 205 by the method of FIGS. 2A to 2M, and on the other hand the transfer substrate 150, one positions the microchips 200 in relation to the corresponding transfer areas of the transfer substrate 150, connection faces of the microchips facing the connection face of the transfer substrate 150, using the support substrate 207 or 205 as handle.
    The microchips 200 are then fixed on the transfer substrate 150, by bonding the electrical connection pads of the microchips to the corresponding electrical connection pads of the transfer substrate (FIG. 3B). The microchips 200 are then detached from the support substrate 207 or 205, and the latter is removed.
    In practice, as illustrated in FIGS. 3A and 3B, the pitch of the microchips on the support substrate 207 or 205, for example of the order of 10 to 50 μm, may be less than the pitch of the final device after transfer to the substrate 150, for example between 15 pm and 1 mm, for example of the order of 100 to 500 pm. For example, the pitch of the microchips on the transfer substrate 150 is a multiple of the pitch of the microchips on the support substrate 207 or 205. Thus, during the production of the display device, provision is made to transfer only one part of the microchips of the support substrate 207 or 205 on the transfer substrate 150, in step with the transfer substrate 150, then, if necessary, shift the support substrate with the remaining microchips to transfer another part of the microchips to the substrate 150 , and so on until all the microchips of the display device have been fixed on the substrate 150. At each iteration, once one or more microchips 200 have been fixed on the transfer substrate 150, those these are selectively detached from the support substrate 207 or 205. The support substrate and the remaining microchips are then removed as illustrated in FIG. 3B.
    To selectively detach the microchips 200 from the support substrate, a slight bonding can be provided between the support substrate and the microchips, so that only the microchips fixed to the electrical connection pads of the transfer substrate 150 are torn off when removing the support substrate, under the effect of the bonding force between the electrical connection pads of the microchip and the electrical connection pads of the transfer substrate.
    In the example shown, the electrical connection pads 155, 156, 157 and 158 of the transfer substrate 150 protrude from the upper face of the transfer substrate, so that, during transfer, only the microchips 200 intended to be attached to the transfer substrate are effectively brought into contact with the transfer substrate. This makes it possible to facilitate the selective release of the microchips and the removal of the support substrate and of the remaining microchips once the fixing has been carried out. For example, the microchips 200 are bonded to the support substrate using a polymer of the C4F8, TEFLON, or OPTOOL DSX type, or by any other adhesive making it possible to obtain bonding energy between the microchips 200 and the support substrate lower than the adhesion energy between the microchips and the transfer substrate. As a variant, in the case where the support substrate is transparent, the bonding of the microchips 200 to the support substrate can be carried out by a resin adapted to be degraded by ultraviolet radiation. Localized laser exposure of the resin can then be carried out through the support substrate, to selectively detach part of the microchips 200.
    In the case where the support substrate is the growth substrate of the LEDs 110, the latter may have a relatively strong adhesion with the microchips 200. In this case, it is possible to use a method of selective detachment by means of a localized laser beam. projected through the support substrate, for example a method of the type described in patent application US6071795.
    As indicated above, the embodiments described are not limited to the particular case shown in which microstructures are formed on the electrical connection pads of the microchips. Alternatively, the electrical connection pads of the microchips can be smooth, and the attachment of the microchips to the transfer substrate 150 can be carried out by direct bonding of the electrical connection pads of the microchips to the corresponding electrical connection pads of the substrate. support. A step of preparing the contact surfaces of the electrical connection pads of the microchips and of the transfer substrate may possibly be provided before the transfer, so as to obtain a flatness sufficient to obtain direct bonding between the electrical connection pads of the microchips and of the transfer substrate.
    It will also be noted that the embodiments described are not limited to the example of FIGS. 3A and 3B in which the electrical connection pads of the transfer substrate protrude from the connection face of the transfer substrate. As a variant, the connection face of the transfer substrate can be substantially flat as in the example in FIG. 1.
    An advantage of the display device obtained by the method described in relation to FIGS. 2A to 2M, 3A and 3B is that each microchip comprises an annular metallization 215 contacting the N-type semiconductor layer 112 of the LED 110 over the entire periphery of the LED. This improves the electrical injection and therefore the light output of the LED compared to microchips of the type illustrated in FIG. 1.
    In addition, due to the presence of the metal layers 222 and 220, the P-type semiconductor layer 114 of the LED 110 is contacted over its entire surface opposite to the layer 112. Again, this improves the electrical injection and therefore the light output of the LED compared to microchips of the type illustrated in FIG. 1.
    Furthermore, the presence of the annular metallization 215 delimiting laterally the LED 110 makes it possible to improve the directivity of emission of the microchip, and in particular to avoid that light is emitted laterally in the direction of the other microchips of the device. For this purpose, it will be noted that it is advantageous that, in the step described in connection with FIG. 21, after the removal of the insulating layer 213 on the bottom of the trenches 209, the trenches 209 are extended to the face upper of the support substrate 207/205, so that the annular metallizations 215 extend to the upper face (in the orientation of FIG. 3B) or the emission face of the microchips. However, the embodiments described are not limited to this particular case. As a variant, after the removal of the insulating layer 213 on the bottom of the trenches 209, the trenches may be only partially extended (that is to say without entirely crossing the semiconductor layer 112), or not be extended from the all. The inter-pixel optical separation provided by the metallizations 215 will then be a little less effective, but the electrical contact making function on the semiconductor layer 112 will remain provided by the metallizations 215.
    Furthermore, it will be noted that in the method for manufacturing the microchips described in relation to FIGS. 2A to 2M, during the step of transferring the stack of LEDs 203 onto the substrate 201 in and on which the control circuits 120 of the microchips (FIG. 2C), the positions of the various LEDs 110 in the stack 203 are not yet defined. There is therefore no strong constraint in terms of alignment accuracy during the transfer. This constitutes an advantage compared to the method described in the French patent application n ° 1561421 mentioned above, in which an array of individualized LEDs and an array of elementary control circuits are formed separately, then transferred to each other, this which requires precise alignment during the transfer given the small dimensions of the microchips.
    FIGS. 4A to 4F are sectional views illustrating successive steps of another example of a method for manufacturing elementary microchips 400 of an emissive LED display device according to one embodiment. The method of FIGS. 4A to 4F and the microchips 400 produced by this method include elements common to the method of FIGS. 2A to 2M and to the microchips 200 produced by the method of FIGS. 2A to 2M. In the following, only the differences between the two embodiments will be highlighted.
    The initial steps of the method of FIGS. 4A to 4F are identical or similar to the steps described above in relation to FIGS. 2A to 2D.
    FIG. 4A illustrates a step in which, starting from the structure obtained at the end of the step of FIG. 2D, that is to say after the withdrawal of the growth substrate 205 from the stack of LEDs 203, in each microchip, the face of the stack of LEDs 203 opposite to the control circuit 120 is produced, that is to say the upper face of the stack 203 in the orientation of FIG. 4A, an annular peripheral trench 409, entirely surrounding, in top view, the control circuit 120 and the LED 110 of the microchip. The trench 409 extends vertically from the upper face of the stack of LEDs 203, passes entirely through the stack of LEDs 203 and the metal layers 220 and 222, and penetrates into the substrate 201 to a depth greater than or equal to the final thickness of the control circuit 120 of the microchip 400 (that is to say at least up to the future connection face of the microchip), without however entirely passing through the substrate 201. It will be noted that at this stage, the substrate 201 has not yet been thinned to form the electrical connection pads of the microchip, and can serve as a support handle for making the trenches 409. The trenches 409 are for example formed by etching, for example by ion etching reactive inductively coupled plasma (RIE-ICP). An etching mask 411, for example made of silicon oxide, is formed beforehand on the upper face of the stack of LEDs 203 to delimit the etching areas.
    FIG. 4B illustrates a step of conformal deposition of an electrically insulating layer 413, for example a layer of silicon oxide, on the side walls and on the bottom of the trenches 409. In the example shown, the layer 413 is a continuous layer extending over substantially the entire upper surface of the structure obtained at the end of the steps of FIG. 4A. Layer 413 is for example formed by chemical vapor deposition assisted by plasma (PECVD) or by deposition in successive monoatomic layers (ALD).
    FIG. 4C illustrates a step of removing the insulating layer 413 on an upper part of the side walls of the trenches 409, so as to free access to the sides of the semiconductor layer 112 of the LED 110 of each microchip. The insulating layer 413 is however preserved on the lower part of the side walls of the trench, and in particular on the sides of the lower semiconductor layer 114 of the LED 110 and on the sides of the control circuit 120 of each microchip. The partial removal of the insulating layer 413 is for example carried out by means of a directional etching process, for example by reactive ion etching with inductively coupled plasma, for example by means of a fluorinated plasma. During this step, the layer 413 can also be removed at the bottom of the trenches 409 and on the upper face of the LED stack, as shown in FIG. 4C. In addition, the engraving mask 411 can be removed.
    Preferably, provision is made at this stage to form or maintain an insulating protective layer on the upper face of the stack of LEDs 203. In the example shown, this protective layer consists of a residue from the etching mask 411 .
    FIG. 4D illustrates a step of filling the trenches 409 with a conductive metal 415, for example copper, in a similar manner to what has been described in relation to FIG. 2J. A mechanochemical polishing step can be implemented so as to remove the metal deposited outside the trenches and to planarize the upper face (in the orientation of FIG. 4D) of the structure, the polishing can for example be interrupted on the upper face of the insulating layer 411.
    FIG. 4E illustrates a step of transferring the structure obtained at the end of the step of FIG. 4D, onto a temporary support substrate 430. During this step, the upper face of the structure of FIG. 4D (side LED) is bonded to one side of the support substrate 430.
    FIG. 4F illustrates a step of forming the electrical connection pads of the microchips 400 on the side of the rear face of the substrate 201, using the support substrate 430 as a handle. During this step, the substrate 201 is thinned by its rear face, for example by grinding, until it reaches the metallizations 415 previously formed in the trenches 409. The rear face of each metallization 415 defines the connection area 125 of the microchip corresponding. After thinning of the substrate 201, the connection pads contacting components of the control circuit 120 of the microchip, namely the connection pads 126, 127 and 128, are formed on the rear face of the substrate 201. The electrical connection pads 126 , 127, 128 are for example made of metal, for example copper. By way of example, the electrical connection pads 126, 127, 128 are connected to the components of the control circuits 120 by means of insulated conductive vias 126 ', 127', 128 'passing entirely through the substrate 201 and contacting metallizations 126 '', 127 '', 128 '' previously formed on the side of the front face of the substrate 201, as illustrated in more detail in FIG. 6.
    The following steps of the method are for example identical or similar to what has been described previously in relation to FIGS. 2L, 2M, 3A and 3B (individualization of the microchips 400 and transfer onto a transfer substrate 150 to form a display device ).
    Particular embodiments have been described. Various variants and modifications will appear to those skilled in the art. In particular, those skilled in the art will be able to adapt the examples described by reversing the types of conductivity of the semiconductor layers 112 and 114 of the stack of LEDs 203.
    Furthermore, although only exemplary embodiments have been described in which the microchips transferred onto the transfer substrate each comprise an LED and an LED control circuit, the embodiments described are not limited to this case particular. Alternatively, each microchip may include a plurality of LEDs and an active circuit for controlling the plurality of LEDs.
    In addition, the embodiments described are not limited to the examples shown in which each microchip comprises four electrical connection areas.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    1. Method for manufacturing elementary chips (200; 400) of an emissive LED display device, each chip comprising an inorganic semiconductor LED (110), a control circuit (120) of the LED, and a plurality of connection pads (125, 126, 127, 128) to an external device arranged on a connection face of the chip, the method comprising the following steps: a) forming the control circuits (120) of the chips in and on a substrate semiconductor (201) so that each control circuit includes a contact pad (218) on the side of a first face of the substrate; b) adding on the first face of the substrate a stack of LEDs (203) comprising at least first (112) and second (114) semiconductor layers of opposite conductivity types, so that the second layer (114) of the stack is electrically connected to the contact pads (218) of the control circuits; c) forming in each chip a peripheral trench (209; 409) surrounding, in top view, the control circuit and the LED of the chip, the peripheral trench extending vertically in the substrate (201) over the entire height of the control circuit (120), passing through the second semiconductor layer (114) of the LED stack, and at least partially penetrating into the first semiconductor layer (112) of the LED stack; d) forming in each trench (209; 409) an annular metallization (215; 415) in contact with the first semiconductor layer (112) of the stack of LEDs over the entire length of the trench; and e) cutting the substrate (201) and the stack of LEDs (203) in cutting paths situated, in top view, outside the peripheral trenches of the chips so as to individualize the chips.
    [2" id="c-fr-0002]
    2. Method according to claim 1, in which, in each chip (200; 400): the face of the annular metallization (215; 415) opposite to the first semiconductor layer (112) of the stack of LEDs leads to a second face of the substrate (201) opposite the first face and defines a first connection pad (125) of the chip; and at least a second electrical connection pad (126, 127, 128) connected to the control circuit (120) of the chip is formed on the second face of the substrate (201).
    [3" id="c-fr-0003]
    3. Method according to claim 2, wherein the trenches (209) are formed from the second face of the substrate (201), after the formation of said at least one second electrical connection area (12 6, 127, 128) .
    [4" id="c-fr-0004]
    4. Method according to claim 3, in which the trenches (209) pass entirely through the substrate (201) and the second semiconductor layer (114) of the LED stack (203), and are interrupted in the first semiconductor layer ( 112) of the LED stack.
    [5" id="c-fr-0005]
    5. Method according to claim 4, comprising, between step c) and step d), a step of conformal deposition of an insulating layer (213) on the side walls and on the bottom of the trenches (209), and a step of removing said insulating layer (213) at the bottom of the trenches (209) to free access to the first semiconductor layer (112) from the stack of LEDs.
    [6" id="c-fr-0006]
    6. The method of claim 2, wherein the trenches (409) are formed from the face of the LED stack (203) opposite the substrate (201), before the formation of said at least one second connection pad. electric (126, 127, 128).
    [7" id="c-fr-0007]
    7. The method of claim 6, wherein the trenches (409) completely pass through the stack of LEDs (203), and penetrate into the substrate (201) to a depth greater than or equal to the thickness of the control circuit (120 ).
    [8" id="c-fr-0008]
    8. Method according to claim i, comprising, between step c) and step d), a step of conformal deposition of an insulating layer (413) on the side walls and on the bottom of the trenches (409), and a step of removing said insulating layer (413) on an upper part of the side walls of the trenches (409), to free access to the first semiconductor layer (112) from the LED stack.
    [9" id="c-fr-0009]
    9. Method according to any one of claims 1 to 8, further comprising, before step a), a step of depositing a first metal layer (220) extending continuously over substantially the entire first face of the substrate (201), and a step of depositing a second metal layer (222) extending continuously over substantially the entire surface of the second semiconductor layer (114) of the stack of LEDs (203) opposite to the first semiconductor layer (112) of said stack.
    [10" id="c-fr-0010]
    10. The method of claim 9, wherein, in step b), the LED stack (203) is fixed to the substrate (201) by direct bonding of the first metallic layer (220) on the second metallic layer (222).
    [11" id="c-fr-0011]
    11. A method of manufacturing an emissive LED display device, comprising the following steps: producing a plurality of elementary chips (200; 400) by a method according to any one of claims 1 to 10; producing a transfer substrate (150) comprising, for each chip (200; 400), on a connection face of the transfer substrate, a plurality of connection pads intended to be connected respectively to the connection pads of the chip; and fixing the chips (200; 400) to the transfer substrate so as to electrically connect the connection pads of the chips to the corresponding connection pads of the transfer substrate.
    [12" id="c-fr-0012]
    12. The method of claim 11, wherein, at the end of step e), the chips (200; 400) are arranged on a support substrate (207, 205; 430) according to a lower inter-chip pitch at the inter-chip pitch of the final display device; and only a part of the chips of the support substrate are fixed to the transfer substrate at the pitch of the final display device and are selectively detached from the support substrate.
    [13" id="c-fr-0013]
    13. Elementary chip (200; 400) of an emissive LED display device, comprising an inorganic semiconductor LED (110), a control circuit (120) of the LED, and a plurality of connection pads (125, 126, 127, 128) to an external device, in which: the control circuit (120) is formed in and on a semiconductor substrate and comprises a contact pad (218) on the side of a first face of the substrate (201) ; the LED (110) is formed in a stack of LEDs (203) comprising at least first (112) and second (114) semiconductor layers of opposite conductivity types, the second layer (114) of the stack being electrically connected to the contact pad (218) of the control circuit; at least one peripheral trench (209; 409) surrounds, in top view, the control circuit (120) and the LED (110) of the chip, the annular trench extending vertically over the entire height of the control circuit ( 120), passing through the second semiconductor layer (114) and penetrating at least partially into the first semiconductor layer (112) of the LED stack; and an annular metallization (215; 415) disposed in the annular trench is in contact with the first semiconductor layer (112) of the LED stack along the entire length of the trench.
    [14" id="c-fr-0014]
    14. The chip according to claim 13, in which a stack of first (220) and second (222) metal layers extending over substantially the entire surface of the control circuit (120) interfaces between the control circuit (120) and the LED (110) of the chip.
    [15" id="c-fr-0015]
    15. An emissive LED display device comprising: a plurality of elementary chips (200; 400) according to claim 13 or 14; and a transfer substrate (150) comprising, for each chip (200; 400), on a connection face of the transfer substrate, a plurality of connection pads connected respectively to the connection pads of the chip.
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    法律状态:
    2018-05-28| PLFP| Fee payment|Year of fee payment: 2 |
    2018-11-16| PLSC| Publication of the preliminary search report|Effective date: 20181116 |
    2019-05-31| PLFP| Fee payment|Year of fee payment: 3 |
    2020-05-30| PLFP| Fee payment|Year of fee payment: 4 |
    2022-02-11| ST| Notification of lapse|Effective date: 20220105 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1754150A|FR3066320B1|2017-05-11|2017-05-11|METHOD FOR MANUFACTURING EMISSIVE LED DISPLAY DEVICE|
    FR1754150|2017-05-11|FR1754150A| FR3066320B1|2017-05-11|2017-05-11|METHOD FOR MANUFACTURING EMISSIVE LED DISPLAY DEVICE|
    EP18170687.0A| EP3401958B1|2017-05-11|2018-05-03|Method for manufacturing an led emissive display|
    US15/975,492| US10468452B2|2017-05-11|2018-05-09|Method of manufacturing a LED-based emissive display device|
    CN201810443227.1A| CN108878620A|2017-05-11|2018-05-10|The method for manufacturing LED based emissive display device|
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